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PD - 95144
IRFL4310PbF
HEXFET® Power MOSFET
l Surface Mount l Dynamic dv/dt Rating l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
G
D VDSS = 100V RDS(on) = 0.20Ω ID = 1.6A
S
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.
IRFL4310PbF Datasheet
